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Power Transistors
2SA2004
Silicon PNP epitaxial planar type
Unit: mm
For power amplification I Features
* High forward current transfer ratio hFE * Satisfactory linearity of forward current transfer ratio hFE * Dielectric breakdown voltage of the package: > 5 kV * High-speed switching
9.90.3
3.00.5
4.60.2 2.90.2
13.70.2 4.20.2 Solder Dip
15.00.5
3.20.1
1.40.2 1.60.2 0.80.1
2.60.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating -60 -60 -5 -16 -8 20 2.0 150 -55 to +150 C C Unit V V V A A W
0.550.15
2.540.30 5.080.50 1 2 3
1: Base 2: Collector 3: Emitter TO-220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C 3C
Parameter Collector cutoff current Collector to emitter voltage Forward current transfer ratio Symbol ICBO ICEO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions VCB = -60 V, IE = 0 VCE = -60 V, IE = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -5 A IC = -5 A, IB = - 0.25 A IC = -5 A, IC = - 0.25 A IC = -4 A, IB1 = -400 mA IB2 = 400 mA, VCC = 50 V 0.2 0.1 0.5 -60 100 30 -1.2 -1.7 0.5 0.15 1.0 V V s s s 230 Min Typ Max -100 -100 Unit A A V
1
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2001 MAR

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